w w w w ff2n60 ff2n60 ff2n60 ff2n60 c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . silic silic silic silic o o o o n n n n n-c n-c n-c n-c h h h h a a a a n n n n nel nel nel nel mos mos mos mos f f f f et et et et featur e s 2a,60 0 v , r ds(on) (max 5 )@v gs =10v ultra-l o w gate ch a rge( t y p i cal 9.0nc) fast s w i tch i ng ca p a b ility 10 0 % av al a nche t e sted isolati o n volta g e ( v iso = 4 0 00v ac ) maxim u m juncti o n t e mperature ra n g e ( 1 5 0 ) gen e ral descr i ption this po w e r mosfet is pro d uc e d usi n g winsem i s adv a nc e d pl a n a r stripe, vdmos techn o l o g y . this latest techn o l o gy has be e n especial l y designed to minimize on-sta t e resistance, have a high rugged avalanche characteristics. this devices is special l y w e ll suited for high e f f i ciency s w i tch mode po w e r suppl y . abs o lute maxim u m rati n gs symbol parameter v a lue units v dss dra i n source v oltage 600 v i d co n tin u ous dra i n curr e nt(@ t c = 2 5 ) 2.0* a co n tin u ous dra i n curr e nt(@ t c = 10 0 ) 1.5* a i dm dra i n curr e nt puls e d (note 1 ) 9.5* a v gs gate to source v oltage 30 v e as sin g le puls e d av alanc h e ener g y ( note 2) 140 mj e ar re p etitive av alanc h e ener g y ( note 1) 2.8 mj dv/dt peak di o de rec o very dv/dt (note 3) 4.5 v/ns p d t o tal po w e r dissi p ati o n(@ t c =2 5 ) 23 w der a ting factor ab o ve 2 5 0.18 w / t j , t s tg juncti o n and storage t e mperature -55~1 5 0 t l channel t e mperature 300 * * * * dra i n curre n t limit e d by ju n ction temper a ture thermal ch a racter i stics symbol parameter v a lue units min t y p max r q j c thermal res i stanc e , juncti o n-to- c ase - - 5.5 /w r q j a thermal res i stanc e , juncti o n-to-am b ie n t - - 62.5 /w r e v . b 1 n o v . 20 0 7 t03-2
w w w w ff2n60 ff2n60 ff2n60 ff2n60 2 /7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance ` electric a l ch a racter i stics (tc = 2 5 c) characteristics symbol test condition min type max unit gate le a ka g e curre n t i gss vgs = 30 v, vds = 0 v - - 1 0 0 na gate ? source bre a kd o w n volta g e v (br)gss ig = 10 a, vds = 0 v 30 - - v dra i n cut ? off curre n t i dss vds = 600 v, vgs = 0 v - - 10 a vds = 480 v, tc = 12 5 c - - 100 a dra i n ? source bre a kd o w n volta g e v (br)dss id = 250 a, vgs = 0 v 600 - - v gate thresh o ld volta g e v gs(th) vds = 10 v, id =250 a 2 - 4 v dra i n ? source on resista n ce r ds(on) vgs = 10 v, id = 0. 8 a - 4.3 5 ? for w a rd transco n d u ctance gfs vds = 50 v, id =0. 8 a - 2.0 - s input cap a cita n ce c i s s vds = 25 v, vgs = 0 v, f = 1 mhz - 270 350 pf rev e rse transfer cap a cita n ce c r s s - 6 8 output cap a cita n ce c o s s - 40 50 s w i tch i ng time rise time tr vdd =300 v, id = 2 . 0 a rg=25 ? (note 4 ,5) - 10 30 ns turn ? on time ton - 25 60 fall time tf - 20 50 turn ? off time toff - 25 60 total gate char g e (gate ? source pl u s gat e ? dra i n) qg vdd = 3 2 0 v, vgs = 10 v, id = 6.5 a (note 4 ,5) - 9.0 11 nc gate ? source char g e qgs - 1.6 - gate ? dra i n ( mill er ) ch a r g e qgd - 4.3 - so u rce ? dra i n rati n gs and ch a racter i stics (ta = 2 5 c) characteristics symbol test condition min type max unit co n tin u ous dra i n reverse curre n t i dr - - - 2.0 a pulse dra i n reverse curre n t i drp - - - 9.5 a for w a rd volta g e (di o de) v dsf idr = 2 a, vgs = 0 v - - 1.4 v rev e rse recov e ry time trr idr = 2.0a, vgs = 0 v, didr / dt = 100 a / s - 180 - ns rev e rse recov e ry char g e qrr - 0.72 - c note 1.re p e a tivity rating :pulse w id th limit e d by ju n ction temper a ture 2.l=18. 5 mh, i as = 2. 0 a, v d d =50 v ,r g =0 ,starting t j =25 3. i sd 2. 0 a,di/dt 2 0 0a/us, v dd w w w w ff2n60 ff2n60 ff2n60 ff2n60 3 /7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.4 on-st a t e cu r r e nt vs all ow able case t e mpe r a tu r e fig. 1 on-st a t e cha r a cteristics fig.2 t r ans fe r cu r r e nt cha r a cteristics fig.3 on- r e sistance v a ri a ti on vs d ra in cu r r e nt fig.5 on- r e sistance v a ri a ti on vs j u nction t e mpe r a tu r e fig.6 g a t e cha r g e cha r a cteristics
w w w w ff2n60 ff2n60 ff2n60 ff2n60 4 /7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.7 maximum sa f e ope r at ion a re a fig.8 maximum d ra in cu r r e nt vs case t e mpe r a tu r e fig.9 t r ansient t h e r m al r e sponse cu r v e
5 /7 w w w w ff2n60 ff2n60 ff2n60 ff2n60 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.10 g a t e t e st ci rcu it & w a v e f o r m fig.11 r e sisti v e swit c h ing t e st ci rcu it & w a v e f o r m fig.12 un c l amped inducti v e swit c h ing t e st ci rcu it & w a v e f o r m
6 /7 w w w w ff2n60 ff2n60 ff2n60 ff2n60 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.13 p e ak diode r e c ov e r y dv/dt t e st ci rcu it & w a v e f o r m
7 /7 w w w w ff2n60 ff2n60 ff2n60 ff2n60 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance t t t t o- o- o- o- 22 22 22 22 0 0 0 0 f f f f pa pa pa pa c c c c kage kage kage kage dimension dimension dimension dimension
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